BPV11F
Vishay Telefunken
1 (6)Rev. 3, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600Document Number 81505
Silicon NPN Phototransistor
Description
BPV11F is a very high sensitive silicon NPN
epitaxial planar phototransistor in a standard
T–1C0190 plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters (C0108
p
C0121 900nm).
The viewing angle of ± 15C0176 makes it insensible to
ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.
Features
C0068 Very high radiant sensitivity
C0068 Standard T–1C0190 (ø 5 mm) package
C0068 IR filter for GaAs emitters (950 nm)
C0068 Angle of half sensitivity ϕ = ± 15C0176
C0068 Base terminal available
12784
Applications
Detector for industrial electronic circuitry, measurement and control
Absolute Maximum Ratings
T
amb
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Collector Base Voltage V
CBO
80 V
Collector Emitter Voltage V
CEO
70 V
Emitter Base Voltage V
EBO
5 V
Collector Current I
C
50 mA
Peak Collector Current t
p
/T = 0.5, t
p
C0120 10 ms I
CM
100 mA
Total Power Dissipation T
amb
C0120 47 C0176C P
tot
150 mW
Junction Temperature T
j
100 C0176C
Storage Temperature Range T
stg
–55...+100 C0176C
Soldering Temperature t C0120 5 s, 2 mm from body T
sd
260 C0176C
Thermal Resistance Junction/Ambient R
thJA
350 K/W