SYMBOL PARAMETERS RATING UNITS
Absolute Maximum Ratings:
V
CEO
Collector-Emitter Voltage 28 V
V
EBO
Emitter-Base Voltage 3.5 V
I
C
Collector Current (instantaneous) 3200 mA
T
J
Junction Temperature 200
o
C
T
STG
Storage Temperature -65 to 200
o
C
V
CBO
Collector-Base Voltage 50 V
SYMBOL PARAMETERS & CONDITIONS UNIT MIN. TYP. MAX.
V
CE
=28V, I
C
= 3200 mA, Class C
η
C
OB
Output Capacitance: f = 1 MHz, I
E
= 0 pF 4.5
BIPOLARICS, INC Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
PRODUCT DATA SHEET
θJC Thermal Resistance 6.5 C/W
FEATURES:
• Common Base, Class C Package Configuration
• High Output Power
20 W @ 1.7 to 2.0 GHz
• High Gain Bandwidth Product
f
t
= 6.0 GHz @ I
C
= 3200 mA
• High Gain
GPE = 7.0 dB to 8.2 dB
• High Reliability
Gold Metallization
Nitride Passivation
• Diffused Ballast Resistors
• BeO Package
PERFORMANCE DATA:
• Electrical Characteristics (T
A
= 25
o
C)
P
1dB
Power output at 1 dB compression: f = 1.7 GHz W 20
Collector Efficiency Class C % 50
h
FE
Forward Current Transfer Ratio: V
CB
= 5V, I
C
= 100 mA 10 60 100
P
T
Total Power Dissipation W 40
• Built-In Matching Network
for Broadband Operation