Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
56 62.5
81 110
R
θJL
40 48
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
Drain-Source Voltage 20 V
Gate-Source Voltage ±8 V
AT
A
=70°C 4.2
Pulsed Drain Current
B
20
Continuous Drain
Current
A
T
A
=25°C
I
D
5
T
A
=70°C 1.28
W
Power Dissipation
T
A
=25°C
P
D
2
Steady-State
°C/W
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
AO9926
Dual N-Channel Enhancement Mode Field Effect Transistor
Feb 2003
Features
V
DS
(V) = 20V
I
D
= 5A
R
DS(ON)
< 50mΩ (V
GS
= 4.5V)
R
DS(ON)
< 65mΩ (V
GS
= 2.5V)
R
DS(ON)
< 90mΩ (V
GS
= 1.8V)
General Description
The AO9926 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. They
offer operation over a wide gate drive range from 1.8V
to 8V. The two devices may be used individually, in
parallel or to form a bidirectional blocking switch.
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5 G1
D1
S1
G2
D2
S2
SOIC-8
Alpha & Omega Semiconductor, Ltd.