Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
300 360
350 425
R
θJL
280 320
Junction and Storage Temperature Range
A
P
D
°C
0.35
0.22
-55 to 150
T
A
=70°C
I
D
-1.2
-1.0
-10Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±8Gate-Source Voltage
Drain-Source Voltage -20
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AO7407
P-Channel Enhancement Mode Field Effect Transistor
May 2003
Features
V
DS
(V) = -20V
I
D
= -1.2 A
R
DS(ON)
< 135mΩ (V
GS
= -4.5V)
R
DS(ON)
< 170mΩ (V
GS
= -2.5V)
R
DS(ON)
< 220mΩ (V
GS
= -1.8V)
General Description
The AO7407 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
S
G
D
SC-70
SOT 323
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.