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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BLV32F

器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:18.98KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 100 mA 32 V
BV
CES
I
C
= 15 mA 60 V
BV
EBO
I
E
= 10 mA 4.0 V
I
CES
V
CE
= 32 V 5.0 mA
h
FE
V
CE
= 25 V I
C
= 1.6 A 20 120 ---
C
C
V
CB
= 25 V f = 1.0 MHz 50 pF
P
G

V
CE
= 25 V P
OUT
= 10 W f = 224 MHz
16

dB

NPN SILICON RF POWER TRANSISTOR
BLV32F
DESCRIPTION:
The ASI BLV32F is Designed for in
linear v.h.f. amplifiers of television
transmitters and transporters.
FEATURES:
• Diffused emitter ballasting resistors
• P
G
= 16 dB at 10 W/224 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
4.0 A
V
CBO
60 V
V
CEO
32 V
V
CES
60 V
V
EBO
4.0 V
P
DISS
82 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
θ
JC
2.1
O
C/W
PACKAGE STYLE .500 6L FLG














1= Collector 2= Base 3 and 4= Emitter