BLV32F
器件描述:NPN SILICON RF POWER TRANSISTOR
文件大小:18.98KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 100 mA 32 V
BV
CES
I
C
= 15 mA 60 V
BV
EBO
I
E
= 10 mA 4.0 V
I
CES
V
CE
= 32 V 5.0 mA
h
FE
V
CE
= 25 V I
C
= 1.6 A 20 120 ---
C
C
V
CB
= 25 V f = 1.0 MHz 50 pF
P
G
V
CE
= 25 V P
OUT
= 10 W f = 224 MHz
16
dB
NPN SILICON RF POWER TRANSISTOR
BLV32F
DESCRIPTION:
The ASI BLV32F is Designed for in
linear v.h.f. amplifiers of television
transmitters and transporters.
FEATURES:
• Diffused emitter ballasting resistors
• P
G
= 16 dB at 10 W/224 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
4.0 A
V
CBO
60 V
V
CEO
32 V
V
CES
60 V
V
EBO
4.0 V
P
DISS
82 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
θ
JC
2.1
O
C/W
PACKAGE STYLE .500 6L FLG
1= Collector 2= Base 3 and 4= Emitter