1. Product profile
1.1 General description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.
1.2 Features
a73 High power gain
a73 Easy power control
a73 Excellent ruggedness
a73 Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
a73 Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.
1.4 Quick reference data
BLA0912-250
Avionics LDMOS transistor
Rev. 02 — 22 July 2004 Product data sheet
Table 1: Quick reference data
Typical RF performance measured in common source class-AB circuit at P
L
= 250 W and 960 MHz to 1215 MHz frequency
band. T
h
= 25 °C; Z
th
= 0.15 K/W; unless specified otherwise.
Mode of operation Conditions V
DS
(V)
P
L
(W)
G
p
(dB)
∆G
p
(dB)
η
D
(%)
Pulse droop
(dB)
t
r
(ns)
t
f
(ns)
Z
th(j-h)
(K/W)
ϕ
R
(deg)
All modes t
p
= 100 µs; δ = 10 % 36 250 13.5 0.8 50 0.1 25 6 0.18 ±5
TCAS:
1030 MHz to 1090 MHz
t
p
=32µs; δ = 0.1 % 36 250 14.0 0.8 50 0 25 6 0.07 ±5
Mode-S:
1030 MHz to 1090 MHz
t
p
= 128 µs; δ = 2 % 36 250 13.5 0.8 50 0.1 25 6 0.15 ±5
t
p
= 340 µs; δ = 1 % 36 250 13.5 0.8 50 0.2 25 6 0.20 ±5
JTIDS:
960 MHz to 1215 MHz
t
p
= 3.3 ms; δ = 22 % 36 200 13.0 1.2 45 0.2 25 6 0.45 ±5