Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com November 2003
The Communications Edge
TM

AH103
High Gain, High Linearity ½ Watt Amplifier Product Information
Product Features
• 60 – 2700 MHz
• +27 dBm P1dB
• +46 dBm Output IP3
• 28.5 dB Gain @ 900 MHz
• Excellent ACPR
• MTTF > 100 Years
• SOIC-8 Pkg w/ heat slug

Applications
• Mobile Infrastructure
• W-LAN / ISM / RFID
• MDS / MMDS Infrastructure
Product Description
The AH103 is a high gain, high linearity ½-Watt
amplifier. This device is comprised of two individual
MMIC amplifiers internally and can be used with an
external interstage match for any of the mobile
infrastructure frequency bands. The dual-stage
amplifier achieves up to +46 dBm IP3 performance
with 28.5 dB gain.

The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The AH103 has an associated MTTF of
a minimum of 100 years at a mounting temperature
of 85°C. All devices are 100% RF & DC tested.

The product is targeted for use as driver amplifiers
for wireless infrastructure where high performance
and high linearity are required.

Functional Diagram

1
2
3
4
8
7
6
5
AMP 1
AMP 2


Function Pin No.
Amp2 in 1
Amp1 out / Bias 1 2
Ground
3, 5, 8,
Backside copper
RF in (Amp1 in) 4
RF out (Amp2 out) 6
Bias 2 7

Specifications
Parameter Units Min Typ Max
Frequency Range

(2) MHz 60 800 2700
Gain dB 26.5 28.5
Input Return Loss dB 20
Output Return Loss dB 11
Output P1dB dBm +26 +27
Output IP3 (3)

dBm +43 +46
IS-95 Channel Power (4)
@ -45 dBc ACPR
dBm +21
Noise Figure dB 2.9
Supply Voltage (Amp1) V +4.5
Supply Voltage (Amp2) V +9
Operating Current (Amp1) mA 55 75 100
Operating Current (Amp2) mA 170 200 230
Thermal Resistance (5) °C / W 20.6
Junction Temperature (6) °C 160

Test conditions unless otherwise noted.
1. T = 25ºC, Vdd1 = +4.5 V, Vdd2 = +9 V, Frequency = 800 MHz in a tuned application circuit.
2. The frequency of operation & bandwidth is determined by the external interstage match.
3. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
4. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability
±750 kHz offset, 30 kHz BW, Channel BW = 1.23 MHz, frequency = 880 MHz.
5. The worst-case junction temperature for a given ground tab temperature can be calculated by
multiplying the thermal resistance with the total package power dissipation and adding it to the tab
temperature. ie. At 85°C case temperature for a typical device, the worst-case junction temperature
would be = 85°C + (9 V * 0.2 A + 4.5 V * 0.075 A) = 129°C.
6. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Typical Performance
Parameter Units Typical
Frequency MHz 900 1900 2140 2400
S21 dB 28.5 26 25 24.7
S11 dB -15 -12 -11 -12
S22 dB -11 -11 -14 -17
Output P1dB dBm +27 +26.5 +26.5 +26
Output IP3 dBm +46 +45 +45 +43.3
Channel Power
@ -45 dBc ACPR / ACLR
dBm +21 +20 +17.2
Noise Figure dB 2.9 3.7 3.5 3.6
Supply Bias 1 +4.5 V @ 75 mA
Supply Bias 2 +9 V @ 200 mA

7. Typical parameters reflect performance in an application circuit.
8. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz.

Absolute Maximum Rating Ordering Information
Parameter Rating Part No. Description
Operating Case Temperature -40 to +85 °C AH103 High Gain ½ Watt Amplifier
Storage Temperature -55 to +125 °C
(available in tape and reel)
DC Voltage (pin 2) +6 V AH103-PCB900 0.7 – 1.0 GHz Evaluation Circuit
DC Voltage (pin 6, 7) +11 V AH103-PCB1750 1.7 – 1.8 GHz Evaluation Circuit
RF Input Power (continuous) 4 dB above Input P1dB AH103-PCB1900 1.8 – 2.0 GHz Evaluation Circuit
Junction Temperature +220°C AH103-PCB2140 2.1 – 2.2 GHz Evaluation Circuit

Operation of this device above any of these parameters may cause permanent damage.