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AG603-86

器件描述:InGaP HBT Gain Block
器件厂商:ETC [ETC]
厂商主页:
文件大小:195.03KB,共5页
Sponsor by e络盟
器件资料摘要:
Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com June 2003
The Communications Edge
TM

AG603-86
InGaP HBT Gain Block Product Information
Product Features
• DC – 6000 MHz
• +19.5 dBm P1dB at 900 MHz
• +33.5 dBm OIP3 at 900 MHz
• 18.5 dB Gain at 900 MHz
• Single Voltage Supply
• SOT-86 SMT Package
• Internally matched to 50 Ω

Applications
• Mobile Infrastructure
• CATV / DBS
• W-LAN / ISM
• RFID
• Defense / Homeland Security
• Fixed Wireless

Product Description
The AG603-86 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG603-86 typically provides
18.5 dB of gain, +33.5 dBm Output IP3, and +19.5 dBm
P1dB. The device combines dependable performance with
consistent quality to maintain MTTF values exceeding 100
years at mounting temperatures of +85° C and is housed in
a SOT-86 industry-standard SMT package.

The AG603-86 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT technology process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.

The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG603-86 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and fixed wireless.


Functional Diagram



Function Pin No.
Input 1
Output/Bias 3
Ground 2, 4

Specifications
Parameter Units Min Typ Max
Frequency Range MHz DC 900 6000
Gain (900 MHz) dB 18.2
Gain (1900 MHz) dB 14.9 15.9 16.9
Input Return Loss dB 20
Output Return Loss dB 17
Output P1dB dBm +19.4
Output IP3 (2) dBm +33.7
Output IP2 dBm +45
Noise Figure dB 3.8
Device Voltage V 5.16
Device Current mA 75
Thermal Resistance °C / W 206
Junction Temperature (3) °C 177

Test conditions unless otherwise noted.
1. T = 25º C, Supply Voltage = +6 V, R
bias
= 11.2 Ω, Frequency = 900 MHz, 50 Ω System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Typical Performance
Parameter Units Typical
Frequency MHz 500 900 1900 2140
S21 dB 18.9 18.2 15.9 15.3
S11 dB -17 -20 -18 -17
S22 dB -21 -17 -14 -13
Output P1dB dBm +19.4 +19.4 +19.2 +19.1
Output IP3 dBm +34.1 +33.7 +33.4 +32.8
Noise Figure dB 3.8 3.8 3.9 4.0

Test conditions: T = 25º C, Supply Voltage = +6 V, R
bias
= 11.2 Ω, 50 Ω System.



Absolute Maximum Rating Ordering Information
Parameter Rating Part No. Description
Operating Case Temperature -40 to +85 °C AG603-86 InGaP HBT Gain Block
Storage Temperature -55 to +125 °C AG603-86PCB 700 – 2400 MHz Fully Assembled Eval. Board
DC Voltage +7 V
RF Input Power (continuous) +10 dBm
Junction Temperature +250° C

Operation of this device above any of these parameters may cause permanent damage.
RF Out RF In
GND
GND
1
2
3
4