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74AHC3GU04
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：high-speed Si-gate CMOS device 器件厂商：PHILIPS [Philips Semiconductors] 厂商主页：http://www.semiconductors.philips.com/ 文件大小：97.34KB 文件页数：17 PDF阅读：74AHC3GU04.pdf (点击阅读器件资料) 摘要： 1. General description The 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides the inverting single stage function. 2. Features a73 Symmetrical output impedance a73 High noise immunity a73 ESD protection: a78 HBM EIA/JESD22-A114-A exceeds 2000 V a78 MM EIA/JESD22-A115-A exceeds 200 V a78 CDM EIA/JESD22-C101 exceeds 1000 V. a73 Low power dissipation a73 Balanced propagation delays a73 SOT505-2 and SOT765-1 package a73 Output capability ±8 mA drive a73 Specified from ?40 °Cto+85°C and from ?40 °C to +125 °C. 3. Quick reference data [1] C PD is used to determine the dynamic power dissipation (P D in ?W). P D =C PD × V CC 2 × f i × N+Σ(C L × V CC 2 × f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pF; V CC = supply voltage in Volts; N = total load switching outputs; Σ(C L × V CC 2 × f o ) = sum of the outputs. [2] The condition is V I = GND to V CC . 74AHC3GU04 Inverter Rev. 01 — 5 March 2004 Product data sheet Table 1: Quick reference data GND = 0 V; T amb =25°C; t r =t f ≤ 3.0 ns. Symbol Parameter Conditions Min Typ Max Unit t PHL , t PLH propagation delay nA to nY V CC =5V; C L =15pF - 2.5 5.5 ns C I input capacitance - 3.0 10 pF C PD power dissipation capacitance [1] [2] -4-pF 相关器件：74AHC3GU04DP 74AHC3GU04DC

74AHC3GU04

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：high-speed Si-gate CMOS device
器件厂商：PHILIPS [Philips Semiconductors]
厂商主页：http://www.semiconductors.philips.com/
文件大小：97.34KB
文件页数：17
PDF阅读：74AHC3GU04.pdf (点击阅读器件资料)

摘要：
1. General description
The 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides the
inverting single stage function.
2. Features
a73 Symmetrical output impedance
a73 High noise immunity
a73 ESD protection:
a78 HBM EIA/JESD22-A114-A exceeds 2000 V
a78 MM EIA/JESD22-A115-A exceeds 200 V
a78 CDM EIA/JESD22-C101 exceeds 1000 V.
a73 Low power dissipation
a73 Balanced propagation delays
a73 SOT505-2 and SOT765-1 package
a73 Output capability ±8 mA drive
a73 Specified from ?40 °Cto+85°C and from ?40 °C to +125 °C.
3. Quick reference data
[1] C
PD
is used to determine the dynamic power dissipation (P
D
in ?W).
P
D
=C
PD
× V
CC
2
× f
i
× N+Σ(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
Σ(C
L
× V
CC
2
× f
o
) = sum of the outputs.
[2] The condition is V
I
= GND to V
CC
.
74AHC3GU04
Inverter
Rev. 01 — 5 March 2004 Product data sheet
Table 1: Quick reference data
GND = 0 V; T
amb
=25°C; t
r
=t
f
≤ 3.0 ns.
Symbol Parameter Conditions Min Typ Max Unit
t
PHL
, t
PLH
propagation delay nA to nY V
CC
=5V;
C
L
=15pF
- 2.5 5.5 ns
C
I
input capacitance - 3.0 10 pF
C
PD
power dissipation
capacitance
[1]
[2]
-4-pF

相关器件：74AHC3GU04DP 74AHC3GU04DC

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