1. General description
The 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides the
inverting single stage function.
2. Features
a73 Symmetrical output impedance
a73 High noise immunity
a73 ESD protection:
a78 HBM EIA/JESD22-A114-A exceeds 2000 V
a78 MM EIA/JESD22-A115-A exceeds 200 V
a78 CDM EIA/JESD22-C101 exceeds 1000 V.
a73 Low power dissipation
a73 Balanced propagation delays
a73 SOT505-2 and SOT765-1 package
a73 Output capability ±8 mA drive
a73 Specified from −40 °Cto+85°C and from −40 °C to +125 °C.
3. Quick reference data
[1] C
PD
is used to determine the dynamic power dissipation (P
D
in µW).
P
D
=C
PD
× V
CC
2
× f
i
× N+Σ(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
Σ(C
L
× V
CC
2
× f
o
) = sum of the outputs.
[2] The condition is V
I
= GND to V
CC
.
74AHC3GU04
Inverter
Rev. 01 — 5 March 2004 Product data sheet
Table 1: Quick reference data
GND = 0 V; T
amb
=25°C; t
r
=t
f
≤ 3.0 ns.
Symbol Parameter Conditions Min Typ Max Unit
t
PHL
, t
PLH
propagation delay nA to nY V
CC
=5V;
C
L
=15pF
- 2.5 5.5 ns
C
I
input capacitance - 3.0 10 pF
C
PD
power dissipation
capacitance
[1]
[2]
-4-pF