3SK322
器件描述：Silicon N-Channel Dual Gate MOS FET
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：90.15KB，共12页
Sponsor by e络盟器件资料摘要：
3SK322
Silicon N-Channel Dual Gate MOS FET
ADE-208-712A (Z)
2nd. Edition
Dec. 1998
Application
UHF / VHF RF amplifier
Features
• Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
Silicon N-Channel Dual Gate MOS FET
ADE-208-712A (Z)
2nd. Edition
Dec. 1998
Application
UHF / VHF RF amplifier
Features
• Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline