1
Power Transistors
2SC5405
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
n
Features
l High-speed switching
l High forward current transfer ratio h
FE
which has satisfactory
linearity
l Dielectric breakdown voltage of the package: > 5kV
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
50
6
6
3
1
20
2.0
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE
*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 80V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
I
C
= 1A, I
B1
= 0.05A, I
B2
= – 0.1A,
V
CC
= 50V
min
50
500
typ
0.5
75
0.3
3.5
0.9
max
100
100
100
1500
0.7
Unit
m A
m A
m A
V
V
V
MHz
m s
m s
m s
*
h
FE
Rank classification
Rank P Q
h
FE
800 to 1500 500 to 1000
T
C
=25 C
Ta=25 C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
1
9.9– 0.3
15.0
–
0.5
13.7
–
0.2
4.2
–
0.2
4.6– 0.2
2.9– 0.2
0.8– 0.1
1.4– 0.2
23
f 3.2– 0.1
2.6– 0.1
0.55– 0.15
2.54– 0.3
5.08– 0.5
3.0
–
0.5
1.6– 0.2