BGX400
Aug-20-20011
Silicon Switching Diodes
G01 Switching applications
G01 High breakdown voltage
G01 Halfbridge rectifier
1
2
3
VPS05161
EHA07365
3
1
2
Type Marking Pin Configuration Package
BGX400 GXs 1=C1/A2 2=C2 3=A1 SOT23
Maximum Ratings
Parameter ValueSymbol Unit
400Diode reverse voltage V
R
V
Peak reverse voltage 400V
RM
Forward current I
F
250 mA
2 AI
FS
Surge forward current, t = 1 ms
Total power dissipation, T
S
= 71 °C P
tot
mW250
Junction temperature T
j
°C150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01 315 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance