BGA 427
Semiconductor Group
Au -11-19981
in SIEGET

25-TechnologieSi-MMIC-Amplifier
VPS05605
4
2
1
3
Preliminary data
• Cascadable 50 W -gain block
• Unconditionally stable
• Gain |S
21
|
2
= 18,5 dB at 1.8 GHz (appl.1)
gain |S
21
|
2
= 22 dB at 1.8 GHz (appl.2)
IP
3out
= +7 dBm at 1.8 GHz (V
D
=3V, I
D
=9.4mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
• typical device voltage V
D
= 2 V to 5 V
• Reverse isolation < 35 dB (appl.2)
EHA07378
V
2
1
IN
OUT
+
4
3
GND
Circuit Diagram
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code PackagePin Configuration
Q62702-G0067 1, INBGA 427 2, GND 3, +V 4, Out SOT-343BMs
Maximum Ratings
Symbol ValueParameter Unit
Device current
I
D
mA25
Device voltage 6 V
V
D
,+V
P
tot
150 mW
Total power dissipation, T
S
£ tbd °C
dBm
R
F
input power P
RFin
-10
Junction temperature
T
j
150 °C
Ambient temperature -65 ...+150
T
A
Storage temperature
T
stg
-65 ...+150
Thermal Resistance
£ tbd
K/WJunction - soldering point
1)
R
thJS
1) T
S
is measured on the emitter (GND) lead at the soldering point to the pcb
Semiconductor Group 1 1998-11-01