BGA 420
Semiconductor Group
Jul-13-19981
in SIEGET

25-TechnologieSi-MMIC-Amplifier
Preliminary data
• Cascadable 50 W -gain block
• Unconditionally stable
• Gain |S
21
|
2
= 13 dB at 1.8 GHz
IP
3out
= +9 dBm at 1.8 GHz
(V
D
= 3 V, I
D
= typ. 6.4 mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
• Reverse isolation > 28 dB and
return loss IN / OUT > 12 dB at 1.8 GHz
VPS05605
4
2
1
3
EHA07385
D
V
4
2
1
IN
OUT
3
GND
Circuit Diagram
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BGA 420 BLs Q62702-G0057 1, IN 2, GND 3, OUT 4, VD SOT-343
Maximum Ratings
Parameter Symbol Value Unit
Device current
I
D
15 mA
Device voltage
V
D
V6
Total power dissipation, TS £ tbd °C P
tot
90 mW
R
F
input power P
RFin
0 dBm
Junction temperature
T
j
150 °C
Ambient temperature
T
A
-65 ...+150
Storage temperature
T
stg
-65 ...+150
Thermal Resistance
£ tbd
Junction - soldering point
1)
R
thJS
K/W
1) T
S
is measured on the emitter (GND) lead at the soldering point to the pcb
Semiconductor Group 1 1998-11-01