BGA 310
Semiconductor Group
Sep-04-19981
Silicon Bipolar MMIC-Amplifier
Preliminary data
• Cascadable 50 W -gain block
• 9 dB typical gain at 1.0 GHz
• 9 dBm typical P
-1dB
at 1.0 GHz
• 3 dB-bandwidth: DC to 2.4 GHz
VPS05178
2
1
3
4
EHA07312
3
1
2, 4
RF IN
RF OUT/Bias
GND
Circuit Diagram
Type Marking Ordering Code Pin Configuration Package
BGA 310 BLs Q62702-G0041 1 RFout/bias 2 GND 3 RF input 4 GND SOT-143
Maximum Ratings
Parameter ValueSymbol Unit
Device current
I
D
mA60
Total power dissipation, T
S
£ 99 °C
250
P
tot
mW
R
F
input power
dBm10
P
RFin
T
j
Junction temperature 150 °C
Ambient temperature
T
A
-65 ...+150
Storage temperature
T
stg
-65 ...+150
Thermal Resistance
Junction - soldering point
1)
R
thJS
£ 205
K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb
Semiconductor Group 1 1998-11-01