Feb-27-2004
1
BG3230_BG3230R
VPS05604
6
3
1
5
4
2
DUAL N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF-
and VHF-tuners with 5V supply voltage
• Two AGC amplifiers in one single package
• Integrated stabilized bias network
• Integrated gate protection diodes
• High gain, low noise figure
• Improved cross modulation at gain reduction
• High AGC-range
BG3230 BG3230R
EHA07215
GND
G1
G2
Drain
AGC
HF
Input
HF Output
+DC
G41
G42
G34G35G36
G31 G32 G33 G31 G32 G33
G34G35G36
G41
G42
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Pin Configuration Marking
BG3230
BG3230R
SOT363
SOT363
1=G1
1=G1
2=G2
2=S
3=D
3=D
4=D
4=D
5=S
5=G2
6=G1
6=G1
KBs
KIs
180° rotated tape loading orientation available
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage V
DS
8 V
Continuous drain current I
D
25 mA
Gate 1/ gate 2-source current ±I
G1/2SM
1
Gate 1/ gate 2-source voltage ±V
G1/G2S
6 V
Total power dissipation P
tot
160 mW
Storage temperature T
stg
-55 ... 150
°C
Channel temperature T
ch
150
Thermal Resistance
Parameter Symbol Value Unit
Channel - soldering point
1)
R
thchs
≤ 280
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance