BFY50
器件描述：MEDIUM POWER AMPLIFIER
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：46.02KB，共5页
Sponsor by e络盟器件资料摘要：
BFY50/51
MEDIUM POWER AMPLIFIER
DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BFY50 BFY51
VCBO Collector-Base Voltage (IE =0) 80 60 V
VCEO Collector-Emitter Voltage (IB =0) 35 30 V
VEBO Emitter-Base Voltage (IC =0) 6 V
I
C
Collector Current 1 A
I
CM
Collector Peak Current (t
p
<5ms) 1.5 A
Ptot Total Dissipation at Tamb ≤ 25
o
C
at T
case
≤ 25
o
C
0.8
5
W
W
Tstg Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
TO-39
1/5
MEDIUM POWER AMPLIFIER
DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BFY50 BFY51
VCBO Collector-Base Voltage (IE =0) 80 60 V
VCEO Collector-Emitter Voltage (IB =0) 35 30 V
VEBO Emitter-Base Voltage (IC =0) 6 V
I
C
Collector Current 1 A
I
CM
Collector Peak Current (t
p
<5ms) 1.5 A
Ptot Total Dissipation at Tamb ≤ 25
o
C
at T
case
≤ 25
o
C
0.8
5
W
W
Tstg Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
TO-39
1/5