Micro-X1

Semiconductor Group 1 Draft A03 1998-04-01

HiRel

NPN Silicon RF Transistor BFY 193



Features
¥

HiRel

Discrete and Microwave Semiconductor

¥ For low noise, high gain broadband amplifiers up to
2 GHz.
¥ For linear broadband amplifiers
¥ Hermetically sealed microwave package
¥

f

T

= 8 GHz,

F

= 2.3 dB at 2 GHz
¥ qualified
¥ ESA/SCC Detail Spec. No.: 5611/006

ESD: E

lectro

s

tatic

d

ischarge sensitive device, observe handling precautions!
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1610
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1701
(see

Chapter Order Instructions

for ordering example)

1)

The maximum permissible base current for

V

FBE

measurements is 30 mA (spot measurement duration < 1 s).

2)

T

S

is measured on the collector lead at the soldering point to the pcb.

Type Marking Ordering Code Pin Configuration Package

BFY 193 (ql)

-

see below C E B E Micro-X1

Table 1 Maximum Ratings
Parameter Symbol Limit Values Unit

Collector-emitter voltage

V

CEO

12 V
Collector-emitter voltage,

V

BE

= 0

V

CES

20 V
Collector-base voltage

V

CBO

20 V
Emitter-base voltage

V

EBO

2V
Collector current

I

C

80 mA
Base current

I

B

10

1)

mA
Total power dissipation,

T

S



£

104

°

C

2)

P

tot

580 mW
Junction temperature

T

j

200

°

C
Operating temperature range

T

op

-

65 É

+

200

°

C
Storage temperature range

T

stg

-

65 É

+

200

°

C

Thermal Resistance

Junction soldering point

2)

R

th JS

< 165 K/W