BFW43
HIGH VOLTAGE AMPLIFIER
DESCRIPTION
The BFW43 is a silicon planar epitaxial PNP
transistors in Jedec TO-18 metal case. It is
designed for use in amplifiers where high voltage
and high gain are necessary. In particular, its
feature a VCEO of 150V are specified over a wide
range of curent.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) -150 V
VCEO Collector-Emitter Voltage (IB = 0) -150 V
V
EBO
Emitter-Base Voltage (I
C
=0) -6 V
I
C
Collector Current -0.1 A
Ptot Total Dissipation at Tamb ≤ 25
o
C
at T
case
≤ 25
o
C
0.4
1.4
W
W
Tstg Storage Temperature -55 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
TO-18
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