BFT93
器件描述：PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：58.7KB，共7页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 Dec-12-1996
BFT 93
PNP Silicon RF Transistor
• For low distortion broadband amplifiers up to
1 GHz at collector currents from 2mA up
to 20mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFT 93 X1s Q62702-F1063 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
12 V
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
2
Collector current I
C
35 mA
Base current I
B
3
Total power dissipation
T
S
≤ 58 °C
P
tot
300
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 305 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
BFT 93
PNP Silicon RF Transistor
• For low distortion broadband amplifiers up to
1 GHz at collector currents from 2mA up
to 20mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFT 93 X1s Q62702-F1063 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
12 V
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
2
Collector current I
C
35 mA
Base current I
B
3
Total power dissipation
T
S
≤ 58 °C
P
tot
300
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 305 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.