BFS466L6
器件描述:NPN Silicon RF TWIN Transistor
文件大小:85.36KB,共4页
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器件资料摘要:
Sep-01-2003
1
BFS466L6
1
2
3
4
5
6
NPN Silicon RF TWIN Transistor
Preliminary data
• Low voltage/ low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: TR1: 1.1dB at 1.8 GHz
TR2: 1.0 dB at 1.8 GHz
• World's smallest SMD 6-pin leadless package
• Built in 2 transitors (TR1: die as BFR460L3,
TR2: die as BFR360L3)
G54 G52 G31
G54 G52 G32
G31 G32 G33
G34G35G36
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS466L6 AC
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TR1
TR2
V
CEO
4.5
6
V
Collector-emitter voltage
TR1
TR2
V
CES
15
15
Collector-base voltage
TR1
TR2
V
CBO
15
15
Emitter-base voltage
TR1
TR2
V
EBO
1.5
2
Collector current
TR1
TR2
I
C
50
35
mA