BFS483
1 Jun-27-2001
NPN Silicon RF Transistor
G01 For low-noise, high-gain broadband amplifier
at collector currents from 2 mA to 28 mA
G01 f
T
= 8 GHz
F = 1.2 dB at 900 MHz
G01 Two (galvanic) internal isolated
Transistors in one package
VPS05604
6
3
1
5
4
2
EHA07196
6 54
321
C1 E2 B2
C2E1B1
TR1
TR2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS483 RHs 1=B 2=E 3=C 4=B 5=E 6=C
SOT363
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CEO
12 V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
65 mA
Base current
I
B
5
Total power dissipation
T
S
G01 40 °C
1)
P
tot
450 mW
Junction temperature
T
j
150 °C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 245
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance