Semiconductor Group 1 Dec-16-1996
BFS 480
NPN Silicon RF Transistor
• For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2mA to 8mA
• f
T
= 7GHz
F = 1.5dB at 900MHz
• Two (galvanic) internal isolated
Transistors in one package
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFS 480 REs Q62702-F1531 1/4 = B 2/5 = E 3/6 = C SOT-363
data below is of a single transistor
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
8 V
Collector-emitter voltage V
CES
10
Collector-base voltage V
CBO
10
Emitter-base voltage V
EBO
2
Collector current I
C
10 mA
Base current I
B
1.2
Total power dissipation
T
S
≤ 112 °C
P
tot
80
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 470 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.