BFS460L6
Jun-15-2004
1
NPN Silicon RF TWIN Transistor
• High f
T
of 22 GHz
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• World's smallest SMD 6-pin leadless package
• Excellent ESD performance
• Built in 2 transistors (TR1, TR2: die as BFR460L3)
* Short-term description
1
2
3
4
5
6
G54 G52 G31
G54 G52 G32
G31 G32 G33
G34G35G36
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS460L6 AB
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
T
A
> 0 °C
T
A
≤ 0 °C
V
CEO

4.5
4.2
V
Collector-emitter voltage V
CES
15
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
1.5
Collector current I
C
50 mA
Base current I
B
5
Total power dissipation
1)

T
S
≤ 104°C
P
tot
200 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
1
T
S
is measured on the collector lead at the soldering point to the pcb