Semiconductor Group 1 Nov-28-1996
BFS 17W
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz at collector
currents from 1mA to 20mA
Type Marking Ordering Code Pin Configuration Package
BFS 17W MCs Q62702-F1645 1 = B 2 = E 3 = C SOT-323
Maximum Ratings of any single Transistor
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
15 V
Collector-base voltage V
CBO
25
Emitter-base voltage V
EBO
2.5
Collector current I
C
25 mA
Peak collector current
f ≥ 10 MHz
I
CM
50
Total power dissipation
T
S
≤ 93 °C
P
tot
280
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 205 K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm