BFS17S
Aug-20-20011
NPN Silicon RF Transistor
G01 For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA


VPS05604
6
3
1
5
4
2
EHA07196
6 54
321
C1 E2 B2
C2E1B1
TR1
TR2
Type Marking Pin Configuration Package
BFS17S MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1
SOT363
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
15 V
Collector-base voltage V
CBO
25
Emitter-base voltage V
EBO
2.5
Collector current I
C
25 mA
Peak collector current, f = 10 MHz I
CM
50
Total power dissipation
T
S
G01 93 °C
1)
P
tot
280 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 240 K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance