Semiconductor Group 1 Dec-18-1996
BFS 17S
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz
at collector currents from 1mA to 20mA
Tape loading orientation
Type Marking Ordering Code Pin Configuration Package
BFS 17S MCs Q62702-F1645 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363
Maximum Ratings of any single Transistor
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
15 V
Collector-base voltage V
CBO
25
Emitter-base voltage V
EBO
2.5
Collector current I
C
25 mA
Peak collector current
f ≥ 10 MHz
I
CM
50
Total power dissipation
T
S
≤ 83 °C
P
tot
280
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 240 K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm