BFS17P
Jul-12-20011
NPN Silicon RF Transistor
G01 For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA


1
2
3
VPS05161
Type Marking Pin Configuration Package
BFS17P MCs 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CEO
15 V
Collector-base voltage
V
CBO
25
Emitter-base voltage
V
EBO
2.5
Collector current
I
C
25 mA
Peak collector current, f = 10 MHz I
CM
50
Total power dissipation
T
S
G01 55 °C
1)
P
tot
280 mW
Junction temperature
T
j
150 °C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 340
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance