BFS17LT1
器件资料摘要：
1
BFS17LT1MOTOROLA RF DEVICE DATA
The RF Line
C0078C0080C0078 C0083C0105C0108C0105C0099C0111C0110
C0072C0105C0103C0104C0045C0070C0114C0101C0113C0117C0101C0110C0099C0121 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
Designed primarily for use in high–gain, low–noise amplifier, oscillator and
mixer applications. Packaged for thick or thin film circuits using surface mount
components.
• T1 suffix indicates tape and reel packaging of 3,000 units per reel.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
15 Vdc
Collector–Base Voltage V
CBO
25 Vdc
Maximum Junction Temperature T
Jmax
150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation, T
A
= 25°C
Derate above 25°C (1)
P
D
350
2.8
mW
mW/°C
Storage Temperature T
stg
–55 to +150 °C
Thermal Resistance Junction to Ambient (1) R
θJA
357 °C/W
DEVICE MARKING
BFS17LT1 = E1
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= 10 mA) V
(BR)CEO
15 — — Vdc
Collector–Base Breakdown Voltage (I
C
= 100 µA) V
(BR)CBO
25 — — Vdc
Collector Cutoff Current (V
CE
= 10 V) I
CEO
— — 25 nA
Collector Cutoff Current (V
CB
= 10 V) I
CBO
— — 25 nA
Emitter Cutoff Current (V
EB
= 4 V) I
EBO
— — 100 µA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2 mA, V
CE
= 1 V)
(I
C
= 25 mA, V
CE
= 1 V)
h
FE
20
20
—
—
150
—
—
Collector–Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 1 mA)
V
CE(sat)
— — 0.4 V
Base–Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 1 mA)
V
BE(sat)
— — 1 V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 2 mA, V
CE
= 5 V, f = 500 MHz)
(I
C
= 25 mA, V
CE
= 5 V, f = 500 MHz)
f
T
—
—
1
1.3
—
—
GHz
Output Capacitance (V
CB
= 10 V, f = 1 MHz) CCB — 1 — pF
Noise Figure (I
C
= 2 mA, V
CE
= 5 V, R
S
= 50 Ω, f = 30 MHz) NF — 5 — dB
NOTE:
1. Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Order this document
by BFS17LT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0070C0083C0049C0055C0076C0084C0049
RF TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
Motorola, Inc. 1995
REV 7
BFS17LT1MOTOROLA RF DEVICE DATA
The RF Line
C0078C0080C0078 C0083C0105C0108C0105C0099C0111C0110
C0072C0105C0103C0104C0045C0070C0114C0101C0113C0117C0101C0110C0099C0121 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
Designed primarily for use in high–gain, low–noise amplifier, oscillator and
mixer applications. Packaged for thick or thin film circuits using surface mount
components.
• T1 suffix indicates tape and reel packaging of 3,000 units per reel.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
15 Vdc
Collector–Base Voltage V
CBO
25 Vdc
Maximum Junction Temperature T
Jmax
150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation, T
A
= 25°C
Derate above 25°C (1)
P
D
350
2.8
mW
mW/°C
Storage Temperature T
stg
–55 to +150 °C
Thermal Resistance Junction to Ambient (1) R
θJA
357 °C/W
DEVICE MARKING
BFS17LT1 = E1
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= 10 mA) V
(BR)CEO
15 — — Vdc
Collector–Base Breakdown Voltage (I
C
= 100 µA) V
(BR)CBO
25 — — Vdc
Collector Cutoff Current (V
CE
= 10 V) I
CEO
— — 25 nA
Collector Cutoff Current (V
CB
= 10 V) I
CBO
— — 25 nA
Emitter Cutoff Current (V
EB
= 4 V) I
EBO
— — 100 µA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2 mA, V
CE
= 1 V)
(I
C
= 25 mA, V
CE
= 1 V)
h
FE
20
20
—
—
150
—
—
Collector–Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 1 mA)
V
CE(sat)
— — 0.4 V
Base–Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 1 mA)
V
BE(sat)
— — 1 V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 2 mA, V
CE
= 5 V, f = 500 MHz)
(I
C
= 25 mA, V
CE
= 5 V, f = 500 MHz)
f
T
—
—
1
1.3
—
—
GHz
Output Capacitance (V
CB
= 10 V, f = 1 MHz) CCB — 1 — pF
Noise Figure (I
C
= 2 mA, V
CE
= 5 V, R
S
= 50 Ω, f = 30 MHz) NF — 5 — dB
NOTE:
1. Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Order this document
by BFS17LT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0070C0083C0049C0055C0076C0084C0049
RF TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
Motorola, Inc. 1995
REV 7