1
BFR92ALT1MOTOROLA RF DEVICE DATA
The RF Line
C0078C0080C0078 C0083C0105C0108C0105C0099C0111C0110
C0072C0105C0103C0104C0045C0070C0114C0101C0113C0117C0101C0110C0099C0121 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
Designed primarily for use in high–gain, low–noise, small–signal UHF and
microwave amplifiers constructed with thick and thin–film circuits using surface
mount components.
• T1 suffix indicates tape and reel packaging of 3,000 units per reel.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
15 Vdc
Collector–Base Voltage V
CBO
20 Vdc
Emitter–Base Voltage V
EBO
2.0 Vdc
Collector Current — Continuous I
C
25 mAdc
Maximum Junction Temperature T
Jmax
150 °C
Power Dissipation, T
case
= 75°C
Derate linearly above T
case
= 75°C @
P
D(max)
0.273
3.64
W
mW/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Storage Temperature T
stg
–55 to +150 °C
Thermal Resistance Junction to Case R
θJC
275 °C/W
DEVICE MARKING
BFR92ALT1 = P2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(I
C
= 10 mA)
V
(BR)CEO
15 — Vdc
Collector–Base Breakdown Voltage
(I
C
= 100 µA)
V
(BR)CBO
20 — Vdc
Emitter–Base Breakdown Voltage
(I
C
= 100 µA)
V
(BR)EBO
2.0 — Vdc
Collector Cutoff Current
(V
CB
= 10 V)
I
CBO
— 50 nA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 14 mA, V
CE
= 10 V)
h
FE
40 — —
Collector–Emitter Saturation Voltage (1)
(I
C
= 25 mA, I
B
= 5.0 mA)
V
CE(sat)
— 0.5 Vdc
Base–Emitter Saturation Voltage (1)
(I
C
= 25 mA, I
B
= 5.0 mA)
V
BE(sat)
— 1.2 Vdc
NOTE: (continued)
1. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Order this document
by BFR92ALT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0070C0082C0057C0050C0065C0076C0084C0049
RF TRANSISTORS
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
 Motorola, Inc. 1995
REV 7