BFR949L3
Aug-09-20011
NPN Silicon RF Transistor
Preliminary data
G01 For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
G01 f
T
= 9 GHz
F = 1.0 dB at 1 GHz
2
3
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR949L3 RK 1 = B 2 = E 3 = C TSLP-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
10 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
1.5
Collector current I
C
35 mA
Base current I
B
4
Total power dissipation
T
S
G01 100°C
1)
P
tot
250 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 tbd
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance