NPN Silicon RF Transistor BFR 93P
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BFR 93P Q62702-F1051GG SOT-23
1 2 3
B E C
Ordering Code
(tape and reel)
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 15 V
Emitter-base voltage VEB0 2.5
Collector current IC 50 mA
Collector-base voltage VCB0 20
Base current IB 10
Junction temperature Tj 150 ˚C
Ambient temperature range TA – 65 … + 150
Total power dissipation, TS £ 65 ˚C
3)
Ptot 280 mW
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA £ 385 K/W
Junction - soldering point
3)
Rth JS £ 305
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm · 16.7 mm · 0.7 mm.
3)
TS is measured on the collector lead at the soldering point to the pcb.
l For low-distortion broadband amplifiers up to 1 GHz
at collector currents from 2 mA to 30 mA.
l CECC-type available: CECC 50002/256.