Semiconductor Group 1 Dec-11-1996
BFR 93AW
NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
5 mA to 30 mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFR 93AW R2s Q62702-F1489 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
12 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
50 mA
Base current I
B
6
Total power dissipation
T
S
≤ 104 °C
P
tot
300
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 155 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.