BFR93A
器件描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)
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器件资料摘要:
Semiconductor Group 1 Dec-12-1996
BFR 93A
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector current from 2mA to 30mA
• CECC.type available: CECC 50 002/256
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFR 93A R2s Q62702-F1086 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
12 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
50 mA
Base current I
B
6
Total power dissipation
T
S
≤ 63 °C
P
tot
300
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 290 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.