BFR92W
Aug-03-20011
NPN Silicon RF Transistor
G01 For broadband amplifiers up to 2 GHz and
fast non-saturated switches at collector currents
from 0.5 mA to 20 mA
G01 Complementary type: BFT 92W (PNP)
1
3
VSO05561
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR92W P1s 1 = B 2 = E 3 = C SOT323
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
15 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2.5
Collector current I
C
30 mA
Base current I
B
4
Total power dissipation
T
S
G01 86 °C
1)
P
tot
280 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 230
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance