BFR92W
器件描述:NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)
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器件资料摘要:
Semiconductor Group 1 Dec-10-1996
BFR 92W
NPN Silicon RF Transistor
• For broadband amplifiers up to 2GHz and
fast non-saturated switches at collector currents
from 0.5 mA to 20 mA
• Complementary type: BFT 92W (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFR 92W P1s Q62702-F1488 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
15 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2.5
Collector current I
C
30 mA
Base current I
B
4
Total power dissipation
T
S
≤ 86 °C
P
tot
280
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 230 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.