BFR90A
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
1 (6)
Silicon NPN Planar RF Transistor
Applications
RF-amplifier up to GHz range specially for wide band antenna amplifier.
Features
C0068 High power gain
C0068 Low noise figure
C0068 High transition frequency
1
3
2
94 9308
BFR90A Marking: BFR90A
Plastic case (TO 50)
1= Collector; 2= Emitter; 3= Base
Absolute Maximum Ratings
Parameters Symbol Value Unit
Collector-base voltage V
CBO
20 V
Collector-emitter voltage V
CEO
15 V
Emitter-base voltage V
EBO
2 V
Collector current I
C
30 mA
Total power dissipation T
amb
≤ 60°C P
tot
300 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
–65 to +150 °C
Maximum Thermal Resistance
Parameters Symbol Value Unit
Junction ambient on glass fibre printed board
(40 x 25 x 1.5) mm
3
plated with 35 C0109m Cu R
thJA
300 K/W