MSC1307.PDF 10-25-99
BFR90
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS ( Tcase = 25 °C)
Symbol Parameter Value Unit
V CEO Collector-Emitter Voltage 15 Vdc
V CBO Collector-Base Voltage 20 Vdc
V EBO Emitter-Base Voltage 3.0 Vdc
I C Collector Current 30 mA
Thermal Data
P D Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
180
2.0
mWatts
mW/ º C
Macro T
(STYLE #2)
Features
• High Current-Gain – Bandwidth Product, fT = 5.0 GHz ( typ) @ IC = 14 mA
• Low Noise Figure – NF = 2.4 dB ( typ) @ f = 0.5 GHz
• High Power Gain – Gmax = 18dB ( typ) @ f = 0.5 GHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855