May-14-2003
1
BFR460L3
2
3
1
NPN Silicon RF Transistor
Preliminary data
G01 For low voltage / low current applications
G01 Ideal for VCO modules and low noise amplifiers
G01 Low noise figure: 1.1 dB at 1.8 GHz
G01 World's smallest SMD leadless package
G01 Excellent ESD performance (>1500V HBM)
G01 High f
T
of 22 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR460L3 AB
1 = B 2 = E 3 = C
TSLP-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
4.5 V
Collector-emitter voltage V
CES
15
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
1.5
Collector current I
C
50 mA
Base current I
B
5
Total power dissipation
1)2)

T
S
G01 108°C
P
tot
200 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
3)
R
thJS
G01 210
K/W
1
P
tot
due to Maximum Ratings
2
T
S
is measured on the collector lead at the soldering point to the pcb
3
For calculation of R
thJA
please refer to Application Note Thermal Resistance