Jun-16-2003
1
BFR360T
VPS05996
1
2
3
NPN Silicon RF Transistor
Preliminary data
G01 Low voltage/ low current operation
G01 For low noise amplifiers
G01 For Oscillators up to 3.5 GHz and Pout > 10 dBm
G01 Low noise figure: 1.0 dB at 1.8 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR360T FBs
1 = B 2 = E 3 = C
SC75
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
6 V
Collector-emitter voltage V
CES
15
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
2
Collector current I
C
35 mA
Base current I
B
4
Total power dissipation
1)

T
S
G01 81°C
P
tot
210 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
2)
R
thJS
G01G02325
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance