Semiconductor Group 1 Dec-12-1996
BFR 35AP
NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
0.5mA to 20mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFR 35AP GEs Q62702-F938 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
15 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2.5
Collector current I
C
30 mA
Base current I
B
4
Total power dissipation
T
S
≤ 48 °C
P
tot
280
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 365 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.