Jul-01-2003
1
BFR340F
1
23
NPN Silicon RF Transistor
Preliminary data
G01 Low voltage/ low current operation
G01 Transition frequency of 14 GHz
G01 High insertion gain
G01 Ideal for low current amplifiers and oscillators
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR340F FAs
1 = B 2 = E 3 = C
TSFP-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
6 V
Collector-emitter voltage V
CES
15
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
2
Collector current I
C
10 mA
Base current I
B
2
Total power dissipation
1)

T
S
G01 118°C
P
tot
60 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
2)
R
thJS
G01 530
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance