1Motorola Small–Signal Transistors, FETs and Diodes Device Data

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N–Channel
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DS
25 Vdc
Gate–Source Voltage V
GS
25 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient R
C0113JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction to Ambient R
C0113JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BFR30LT1 = M1; BFR31LT1 = M2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate Reverse Current (V
GS
= 10 Vdc, V
DS
= 0) I
GSS
— 0.2 nAdc
Gate Source Cutoff Voltage (I
D
= 0.5 nAdc, V
DS
= 10 Vdc) BFR30
BFR31
V
GS(OFF)
—
—
5.0
2.5
Vdc
Gate Source Voltage (I
D
= 1.0 mAdc, V
DS
= 10 Vdc) BFR30
BFR31
(I
D
= 50 C0109Adc, V
DS
= 10 Vdc) BFR30
BFR31
V
GS
–0.7
—
—
—
–3.0
–1.3
–4.0
–2.0
Vdc
1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a registered trademark of the Berquist Company.
Order this document
by BFR30LT1/D
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SEMICONDUCTOR TECHNICAL DATA
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C0066C0070C0082C0051C0049C0076C0084C0049
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
1
2
3
 Motorola, Inc. 1996
1 DRAIN
2 SOURCE
3
GATE