BFR280T/BFR280TW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 2, 20-Jan-99 1 (4)
Document Number 85027
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 8 mA.
Features
C0068 Low power applications
C0068 Low noise figure
C0068 High transition frequency
13 581
23
1
94 9280
BFR280T Marking: RE
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
3
13 652 13 570
BFR280TW Marking: WRE
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
CBO
15 V
Collector-emitter voltage V
CEO
8 V
Emitter-base voltage V
EBO
2 V
Collector current I
C
10 mA
Total power dissipation T
amb
≤ 114 C0176C P
tot
80 mW
Junction temperature T
j
150 C0176C
Storage temperature range T
stg
–65 to +150 C0176C
Maximum Thermal Resistance
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35C0109m Cu
R
thJA
450 K/W