BFR280
Jun-27-20011
NPN Silicon RF Transistor
G01 For low noise, low-power amplifiers in mobile
communications systems (pager, cordless
telephone) at collector currents from 0.2 mA to 8 m
G01 f
T
= 7.5 GHz
F = 1.5 dB at 900 MHz
1
2
3
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR280 REs 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
8 V
Collector-emitter voltage V
CES
10
Collector-base voltage V
CBO
10
Emitter-base voltage V
EBO
2
Collector current I
C
10 mA
Base current I
B
1.2
Total power dissipation
T
S
G01 116 °C
1)
P
tot
80 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
G01 425
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance