BFR193T/BFR193TW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 2, 14-Feb-00 1 (4)
Document Number
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low–noise, high–gain applications such as power
amplifiers up to 2GHz and for linear broadband
amplifiers.
Features
C0068 Low noise figure
C0068 High transition frequency f
T
= 8 GHz
C0068 Excellent large-signal behaviour
13 581
23
1
94 9280
BFR193T Marking: RC
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
3
13 652 13 570
BFR193TW Marking: WRC
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
CBO
20 V
Collector-emitter voltage V
CEO
12 V
Emitter-base voltage V
EBO
2 V
Collector current I
C
80 mA
Total power dissipation T
amb
≤ 45 C0176C P
tot
420 mW
Junction temperature T
j
150 C0176C
Storage temperature range T
stg
–65 to +150 C0176C
Maximum Thermal Resistance
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient mounted on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35C0109m Cu
R
thJA
250 K/W