Semiconductor Group 1 Dec-11-1996
BFR 183
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector current from 2 mA to 30mA
• f
T
= 8 GHz
F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFR 183 RHs Q62702-F1316 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
12 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
65 mA
Base current I
B
5
Total power dissipation
T
S
≤ 60 °C
P
tot
450
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 200 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.