BFR182T/BFR182TW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 2, 20-Jan-99 1 (4)
Document Number 85025
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Features
C0068 Low noise figure
C0068 High power gain
13 581
23
1
94 9280
BFR182T Marking: RG
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
3
13 652 13 570
BFR182TW Marking: WRG
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
CBO
15 V
Collector-emitter voltage V
CEO
10 V
Emitter-base voltage V
EBO
2 V
Collector current I
C
35 mA
Base current I
B
5 mA
Total power dissipation T
amb
≤ 60 C0176C P
tot
200 mW
Junction temperature T
j
150 C0176C
Storage temperature range T
stg
–65 to +150 C0176C
Maximum Thermal Resistance
T
amb
= 25C0095C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35C0109m Cu
R
thJA
450 K/W