Semiconductor Group 1 Dec-11-1996
BFR 106
NPN Silicon RF Transistor
• For low noise, high-gain amplifiers
• For linear broadband amplifiers
• Special application: antenna amplifiers
• Complementary type: BFR 194 (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFR 106 R7s Q62702-F1219 1 = B 2 = E 3 = C 4 = E SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
15 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
3
Collector current I
C
100 mA
Base current I
B
12
Total power dissipation
T
S
≤ 73 °C
P
tot
700
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 110 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.