Semiconductor Group 1 Dec-12-1996
BFQ 81
NPN Silicon RF Transistor
• For low-noise amplifiers up to 2GHz
and broadband analog and digital
applications in telecommunications systems at
collector currents from 0.5 mA to 20 mA.
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFQ 81 RAs Q62702-F1049 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
16 V
Collector-emitter voltage V
CES
25
Collector-base voltage V
CBO
25
Emitter-base voltage V
EBO
2
Collector current I
C
30 mA
Base current I
B
4
Total power dissipation
T
S
≤ 59 °C
P
tot
280
mW
Junction temperature T
j
150 °C
Ambient temperature T
A
- 65 ... + 150
Storage temperature T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 325 K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.